CNY66
Description
The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package.
Key Features
- Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
- Thickness through insulation 3 mm
- Creepage current resistance according to
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications
- for appl. class I - IV at mains voltage 300 V
