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CNY66 - Optocoupler Phototransistor

This page provides the datasheet information for the CNY66, a member of the CNY64 Optocoupler Phototransistor family.

Datasheet Summary

Description

The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package.

The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.

Features

  • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak.
  • Thickness through insulation  3 mm.
  • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI  200.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

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Datasheet preview – CNY66

Datasheet Details

Part number CNY66
Manufacturer Vishay
File Size 120.37 KB
Description Optocoupler Phototransistor
Datasheet download datasheet CNY66 Datasheet
Additional preview pages of the CNY66 datasheet.

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Full PDF Text Transcription

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CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage CNY64 Top View A C CNY65 C E DVE CNY66 17187-5 17187-4 DESCRIPTION The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.
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