CPV363M4UPbF Description
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than parable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low.
CPV363M4UPbF Key Features
- Fully isolated printed circuit board mount package
- Switching-loss rating includes all “tail” losses
- HEXFRED® soft ultrafast diodes
- Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve
- UL approved file E78996
- Designed and qualified for industrial level
- Material categorization: For definitions of pliance please see .vishay./doc?99912