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DG636E - Dual SPDT Analog Switch

Description

The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies.

The DG636E is fully specified at +3 V, +5 V, and ± 5 V.

Features

  • Ultra low charge injection (Less than ± 0.3 pC, typ. over the full analog signal range).
  • Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4).
  • Low switch capacitance (CS(off), 3.7 pF typ. ).
  • Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V.
  • CMOS / TTL compatible.
  • 700 MHz, -3 dB bandwidth.
  • Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz).
  • Fully specified from.

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Datasheet Details

Part number DG636E
Manufacturer Vishay
File Size 309.70 KB
Description Dual SPDT Analog Switch
Datasheet download datasheet DG636E Datasheet
Additional preview pages of the DG636E datasheet.

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Full PDF Text Transcription

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www.vishay.com DG636E Vishay Siliconix 0.3 pC Charge Injection, 100 pA Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch DESCRIPTION The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V. The DG636E offers ultralow charge injection less than ± 0.4 pC over the entire signal range and leakage currents of 13 pA typical at 25 °C. It offers on resistance of 63  typ., and low parasitic capacitance of 3.7 pF source off, and 8.4 pF Drain on. The part is ideal for analog front end, data acquisition and sample and hold designs providing fast and precision signal switching.
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