DG636E Overview
The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V. The DG636E offers ultralow charge injection less than ± 0.4 pC over the entire signal range and leakage currents of 13 pA typical at 25 °C.
DG636E Key Features
- Ultra low charge injection
- Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4)
- Low switch capacitance (CS(off), 3.7 pF typ.)
- Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V
- CMOS / TTL patible
- 700 MHz, -3 dB bandwidth
- Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz)
- Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
- 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm)
- Material categorization: for definitions of pliance please see .vishay./doc?99912