DG636E Datasheet | Vishay

.vishay. Vishay Siliconix 0.3 p C Charge Injection, 100 p A Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch DESCRIPTION The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V. The DG636E offers ultralow charge injection less than ± 0.4 p C over the entire signal range and leakage currents of 13 p A typical at 25 °C. It offers on resistance of 63  typ., and low parasitic capacitance of 3.7 p F source off, and 8.4 p F Drain on. The part is ideal for analog front end, data acquisition and sample and hold designs providing fast and precision signal switching. The DG636E switches one of two inputs to a mon output as determined by the 3-bit binary address lines: A0, A1, and EN. Each switch conducts equally well in both directions when on, blocks input voltages up to the supply level when off, and exhibits break before make switching action. All control logic inputs have guaranteed 2 V logic high limits when operating from +5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. The DG636E operating temperature range is specified from -40 °C to +125 °C. It is available in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm mini QFN package. Features - Ultra low charge injection (Less than ± 0.3 p C, typ. over the full analog signal range) - Leakage current < 0.5 n A max. at 85 °C (for DG636EEQ-T1-GE4) - Low switch capacitance (CS(off), 3.7 p F typ.) - Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V - CMOS / TTL patible - 700 MHz, -3 d B bandwidth - Excellent isolation and crosstalk performance (typ. > -60 d B at 10 MHz) - Fully specified from -40 °C to +85 °C and -40 °C to +125 °C - 14 pin TSSOP and 16 pin mini QFN package (1.8 mm x 2.6 mm) - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Data acquisition...