DG636E Datasheet Dual SPDT Analog Switch

Manufacturer: Vishay

Overview: www.vishay.com DG636E Vishay Siliconix 0.3 pC Charge Injection, 100 pA Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog.

Datasheet Details

The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies.

The DG636E is fully specified at +3 V, +5 V, and ± 5 V.

The DG636E offers ultralow charge injection less than ± 0.4 pC over the entire signal range and leakage currents of 13 pA typical at 25 °C.

Ultra low charge injection (Less than ± 0.3 pC, typ. over the full analog signal range).
Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4).
Low switch capacitance (CS(off), 3.7 pF typ. ).
Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V.
CMOS / TTL compatible.
700 MHz, -3 dB bandwidth.
Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz).
Fully specified from.