FB17N50L Overview
IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 130 33 59 Single.
FB17N50L Key Features
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance Avalanche Voltage and Current
- Low Trr and Soft Diode Recovery
- Lead (Pb)-free Available and