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G16N50C - SIHG16N50C

Features

  • Low Figure-of-Merit Ron x Qg 0.38.
  • 100 % Avalanche Tested.
  • Gate Charge Improved.
  • Trr/Qrr Improved.
  • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET.

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Datasheet preview – G16N50C

Datasheet Details

Part number G16N50C
Manufacturer Vishay
File Size 166.08 KB
Description SIHG16N50C
Datasheet download datasheet G16N50C Datasheet
Additional preview pages of the G16N50C datasheet.

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    Full PDF Text Transcription

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    SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.
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