G16N50C Overview
SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single.
G16N50C Key Features
- Low Figure-of-Merit Ron x Qg
- 100 % Avalanche Tested
- Gate Charge Improved
- Trr/Qrr Improved
- pliant to RoHS Directive 2002/95/EC