GI756 Overview
Package 400 A 5.0 μA 0.9 V, 0.95 V 150 °C P600 Diode variations Single die.
GI756 Key Features
- Low forward voltage drop
- Low leakage current, IR less than 0.1 μA
- High forward current capability
- High forward surge capability
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: For definitions of pliance
