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HS817 - Optocoupler

General Description

The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no.

Key Features

  • C 4 E 3.
  • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak.
  • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV.
  • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS.
  • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak.
  • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250.
  • Thickness through insulation  0.4 mm.
  • Isolation materials according to UL 94 V-O.

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Datasheet Details

Part number HS817
Manufacturer Vishay
File Size 180.79 KB
Description Optocoupler
Datasheet download datasheet HS817 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors Optocoupler with Transistor Output FEATURES C 4 E 3 • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250 • Thickness through insulation  0.4 mm • Isolation materials according to UL 94 V-O • Pollution degree 2 (resp. IEC 664) • Climatic classification 55/100/21 (IEC 68 part 1) • Low temperature coefficient of CTR • G = leadform 10.