IRF640 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated Available - Fast switching - Ease of paralleling Available - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Available Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF640Pb F IRF640Pb F-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 m H, Rg = 25 Ω, IAS = 18 A (see fig. 12) c. ISD ≤ 18 A, d I/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 200 ± 20 18 11 72 1.0 580 18 13 125 5.0 -55 to +150 300 10 1.1 UNIT...