Vishay IRF640PbF
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.| Part No. | IRF640PbF |
|---|---|
| Datasheet | IRF640PbF Download |
| Manufacturer |  Vishay |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
200 0.18● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 200 ± 20 18 11 72 1.0 580 18 13 125 5.0 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf● in N●m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche C...
