IRF820AS Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt
- Fully Characterized Capacitance and Avalanche
- Effective Coss specified
- Material categorization: for definitions of pliance
- Part: IRF820AS
- Manufacturer: Vishay (official site)
- Size: 236.30 KB
Other IRF820AS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRF820AS | Power MOSFET |
|
International Rectifier |
IRF820ASPBF | HEXFET Power MOSFET |
|
International Rectifier |
IRF820A | Power MOSFET |
|
International Rectifier |
IRF820AL | Power MOSFET |
|
International Rectifier |
IRF820ALPBF | HEXFET Power MOSFET |
IRF820AS Description
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL .vishay. Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 3.0 17 4.3 8.5 Single.