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IRF9510S - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4.

Key Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dV/dt rating Available.
  • Repetitive avalanche rated.
  • P-channel.
  • 175 °C operating temperature Available.
  • Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) -100 VGS = -10 V 1.2 8.7 2.2 Qgd (nC) Configuration 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHF9510S-GE3 IRF9510SPbF IRF9510STRRPbF FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating Available • Repetitive avalanche rated • P-channel • 175 °C operating temperature Available • Fast switching • Material categorization: for definitions of compliance please see www.vishay.