IRF9610 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - P-channel Available - Fast switching Available - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance bined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF9610Pb F IRF9610Pb F-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a PD ILM d V/dt Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C TJ, Tstg Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. Not applicable c. ISD ≤ -1.8 A, d I/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT -200 ± 20 -1.8 -1.0 -7.0 0.16 20 -7.0 -5.0 -55 to +150 300 10...