IRF9620 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - P-Channel - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9620Pb F Si HF9620-E3 IRF9620 Si HF9620 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C VGS at - 10 V TC = 100 °C Pulsed Drain Currenta Linear Derating Factor Maximum Power Dissipation Peak Diode Recovery d V/dtb TC = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. ISD  - 3.5 A, d I/dt  95 A/μs, VDD  VDS, TJ  150 °C. c. 1.6 mm from case. LIMIT - 200 ± 20 -...