IRF9Z10 Datasheet | Vishay

Power MOSFET IRF9Z10, Si HF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single TO-220AB D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Dynamic d V/dt Rating - Repetitive Avalanche Rated - P-Channel - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9Z10Pb F Si HF9Z10-E3 IRF9Z10 Si...