IRF9Z10 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
P-Channel.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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IRF9Z10 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRF9Z10
Manufacturer	Vishay
File Size	133.64 KB
Description	Power MOSFET
Datasheet	IRF9Z10 Datasheet

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Other Datasheets by Vishay

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IRF9Z14	Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRF9Z10, SiHF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.50 TO-220AB S G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.