IRFB13N50A Description
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 81 20 36 Single D TO-220AB 0.450 G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET.
IRFB13N50A Key Features
- Lower Gate Charge Qg Results in Simpler Drive Reqirements
- Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage
- pliant to RoHS Directive 2002/95/EC