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IRFBC20S - Power MOSFET

General Description

Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

Key Features

  • I2PAK (TO-262) D2PAK (TO-263).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single D 600 4.4 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC20S, SiHFBC20S) • Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) • Available in Tape and Reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4.