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IRFBC30L - Power MOSFET

Download the IRFBC30L datasheet PDF. This datasheet also covers the IRFBC30S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

Key Features

  • 600 2.2.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Surface Mount (IRFBC30S, SiHFBC30S).
  • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L).
  • Available in Tape and Reel (IRFBC30S, SiHFBC30S).
  • Dynamic dV/dt Rating.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination o.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFBC30S-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFBC30L Power MOSFET International Rectifier
IRFBC30 TO-220C N-Channel MOSFET Transistor Inchange Semiconductor
IRFBC30 N-Channel Power MOSFET STMicroelectronics
IRFBC30 Power MOSFET International Rectifier
IRFBC30 TO-220 N-Channel MOSFET INCHANGE

Other Datasheets by Vishay

Part Number Description
IRFBC30 Power MOSFET
IRFBC30A Power MOSFET
IRFBC30AL Power MOSFET
IRFBC30AS Power MOSFET
IRFBC30S Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.