Datasheet Details
| Part number | IRFBE30 |
|---|---|
| Manufacturer | Vishay |
| File Size | 557.64 KB |
| Description | Power MOSFET |
| Download | IRFBE30 Download (PDF) |
|
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| Part number | IRFBE30 |
|---|---|
| Manufacturer | Vishay |
| File Size | 557.64 KB |
| Description | Power MOSFET |
| Download | IRFBE30 Download (PDF) |
|
|
|
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
www.vishay.com IRFBE30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 3.0 78 9.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFBE30 | Power MOSFET | International Rectifier |
 |
IRFBE30 | N-Channel MOSFET | INCHANGE |
|
IRFBE30LPBF | HEXFET Power MOSFET | International Rectifier |
|
IRFBE30PBF | N-Channel MOSFET | INCHANGE |
|
IRFBE30PBF | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRFBE30L | Power MOSFET |
| IRFBE30S | Power MOSFET |
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