Vishay IRFD014PbF
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.IRFD014PbF Specifications
- Package : DIP
- Mount Type : Through Hole
- Breakdown Voltage : 60V
- Threshold Voltage : 4V
- RDS(on) Max : 200mΩ
- Input Capacitance : 310pF
- Terminals : 3
- Rise Time : 50ns
- Max Power Dissipation : 1.3W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRFD014PbF |
|---|---|
| Datasheet | IRFD014PbF Download |
| Manufacturer |  Vishay |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt Rating● For Automatic Insertion
● End Stackable
● 175 °C Operating Temperature
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. HVMDIP IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta TA = 25 °C VGS at 10 V ID TA = 100 °C IDM Linear Derating Factor Single Pulse Avalanche Energyb EAS Maximum Power Dissipation Peak Diode Recovery dV/dtc TA = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig.
