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IRFD014PbF - Power MOSFET

Download the IRFD014PbF datasheet PDF. This datasheet also covers the IRFD014 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFD014-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFD014 Power MOSFET International Rectifier
IRFD010 Transistor International Rectifier
IRFD012 Transistor International Rectifier
IRFD020 HexFET Transistors N-Channel Hexdip IOR
IRFD020 N Channel Enhancement Mode Transistor Siliconix

Other Datasheets by Vishay

Part Number Description
IRFD014 Power MOSFET
IRFD020 Power MOSFET
IRFD024 Power MOSFET
IRFD110 Power MOSFET
IRFD113 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power MOSFET IRFD014, SiHFD014 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.