IRFD014PbF Datasheet | Vishay

Power MOSFET IRFD014, SiHFD014 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single D HVMDIP S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Features - Dynamic dV/dt Rating - For Automatic Insertion - End Stackable - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to RoHS Directive 2002/95/EC Available RoHS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4...