IRFD020 - Power MOSFET

Vishay

General Description

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

Key Features

For Automatic Insertion.
Compact, End Stackable.
Fast Switching.
Ease of Paralleling.
Excellent Temperature Stability.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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IRFD020 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRFD020
Manufacturer	Vishay
File Size	241.79 KB
Description	Power MOSFET
Datasheet	IRFD020 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRFD020, SiHFD020 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 24 7.1 7.1 Single 0.10 HVMDIP D S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.