IRFD024 - Power MOSFET

Vishay

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt rating.
For Automatic insertion.
End stackable.
175 °C operating temperature.
Fast switching.
Ease of paralleling.
Simple drive requirements.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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IRFD024 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRFD024
Manufacturer	Vishay
File Size	415.40 KB
Description	Power MOSFET
Datasheet	IRFD024 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFD024 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 FEATURES • Dynamic dV/dt rating • For Automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.