IRFD024 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - For Automatic insertion - End stackable - 175 °C operating temperature - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD024Pb F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Single pulse avalanche energy b Maximum power dissipation Peak diode recovery d V/dt c Operating junction and storage temperature range Soldering remendations (peak temperature) d VGS at 10 V TA = 25 °C TA = 100 °C TA = 25 °C For 10 s VDS VGS EAS PD d V/dt TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 16 m H, Rg = 25 Ω, IAS = 2.5 A (see fig. 12) c. ISD ≤ 17 A, d I/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case LIMIT 60 ± 20 2.5 1.8 20 0.0083 91 1.3 4.5 -55 to +175 300 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Rth JA TYP. - MAX. 120 UNIT V A W/°C m J W V/ns...