IRFD110 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - For automatic insertion - End stackable - 175 °C Operating Temperature - Fast switching and ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD110Pb F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current TA = 25 °C VGS at 10 V TA = 100 °C Pulsed drain current a Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TA = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 52 m H, Rg = 25 Ω, IAS = 2.0 A (see fig. 12) c. ISD ≤ 5.6 A, d I/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case LIMIT 100 ± 20 1.0 0.71 8.0 0.0083 140 1.0 0.13 1.3 5.5 -55 to +175 300d UNIT...