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IRFD9210 - Power MOSFET

General Description

The power MOSFETs technology is the key to Vishay advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • P-channel.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com IRFD9210 Vishay Siliconix Power MOSFET HVMDIP S G S G D D P-Channel MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) (Ω) VGS = -10 V 3.0 Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technology is the key to Vishay advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.