IRFI510G Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
- Part: IRFI510G
- Description: Power MOSFET
- Manufacturer: Vishay
- Size: 741.29 KB
Other IRFI510G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRFI510G | Power MOSFET |
Inchange Semiconductor |
IRFI510G | N-Channel MOSFET |
Fairchild Semiconductor |
IRFI510 | Advanced Power MOSFET |
|
Fairchild Semiconductor |
IRFI510A | Advanced Power MOSFET |