IRFI830G
Description
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low - Material categorization: for definitions of pliance please see .vishay./doc?99912
