IRFI9630G Datasheet | Vishay

FEATURES - Isolated package - High voltage isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to lead creepage distance = 4.8 mm - P-channel - Dynamic d V/dt rating - Low thermal resistance - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK IRFI9630GPb F ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at -10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s TJ, Tstg Mounting torque M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -50 V, starting TJ = 25 °C, L = 38 m H, RG = 25 , IAS = -4.3 A (see fig. 12) c. ISD  -6.5 A, d I/dt  120 A/μs, VDD  VDS, TJ  150 °C d. 1.6 mm from case LIMIT -200 ± 20 -4.3 -2.7 -17 0.28 480 -4.3 3.5 35 -5.0 -55 to +150 300 0.6 UNIT V W/°C m J A m J W V/ns °C Nm S21-0913-Rev. C,...