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IRFIBC20G Datasheet

Manufacturer: Vishay
IRFIBC20G datasheet preview

Datasheet Details

Part number IRFIBC20G
Datasheet IRFIBC20G-Vishay.pdf
File Size 1.46 MB
Manufacturer Vishay
Description Power MOSFET
IRFIBC20G page 2 IRFIBC20G page 3

IRFIBC20G Overview

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFIBC20G Key Features

  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s
  • Sink to Lead Creepage Distance = 4.8 mm
  • Dynamic dV/dt Rating
  • Low Thermal Resistance
  • Lead (Pb)-free Available

IRFIBC20G from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFIBC20G Power MOSFET International Rectifier
INCHANGE Logo IRFIBC20G N-Channel MOSFET INCHANGE
International Rectifier Logo IRFIBC20 Power MOSFET International Rectifier
Vishay logo - Manufacturer

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IRFIBC20G Distributor

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