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IRFIBC30G Datasheet

Manufacturer: Vishay
IRFIBC30G datasheet preview

Datasheet Details

Part number IRFIBC30G
Datasheet IRFIBC30G-Vishay.pdf
File Size 273.26 KB
Manufacturer Vishay
Description Power MOSFET
IRFIBC30G page 2 IRFIBC30G page 3

IRFIBC30G Overview

Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFIBC30G Key Features

  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
  • Dynamic dV/dt rating
  • Low thermal resistance
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

IRFIBC30G from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFIBC30G Power MOSFET International Rectifier
INCHANGE Logo IRFIBC30G N-Channel MOSFET INCHANGE
International Rectifier Logo IRFIBC30GPBF HEXFET Power MOSFET International Rectifier
International Rectifier Logo IRFIBC30 Power MOSFET International Rectifier
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