IRFIBC30G
IRFIBC30G is Power MOSFET manufactured by Vishay.
FEATURES
- Isolated package
- High voltage isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Dynamic d V/dt rating
- Low thermal resistance
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-220 FULLPAK IRFIBC30GPb F
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current Pulsed drain current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear derating factor
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
Maximum power dissipation Peak diode recovery d V/dt c
TC = 25 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) d
For 10 s
Mounting torque
M3 screw
SYMBOL VDS VGS
EAS IAR EAR PD d V/dt TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 73 m H, RG = 25 Ω, IAS = 2.5 A (see fig. 12) c. ISD ≤ 3.6 A, d I/dt ≤ 60 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 600 ± 20 2.5 1.6 10 0.28 250 2.5 3.5 35 3.0
-55 to +150 300 0.6
UNIT...
