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IRFIBE20G Datasheet

Manufacturer: Vishay
IRFIBE20G datasheet preview

Datasheet Details

Part number IRFIBE20G
Datasheet IRFIBE20G-Vishay.pdf
File Size 910.11 KB
Manufacturer Vishay
Description Power MOSFET
IRFIBE20G page 2 IRFIBE20G page 3

IRFIBE20G Overview

Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFIBE20G Key Features

  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
  • Dynamic dV/dt rating
  • Low thermal resistance
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

IRFIBE20G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFIBE20G Power MOSFET International Rectifier
INCHANGE Logo IRFIBE20G N-Channel MOSFET INCHANGE
International Rectifier Logo IRFIBE20GPBF HEXFET Power MOSFET International Rectifier
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