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IRFIBE30G Datasheet

Manufacturer: Vishay
IRFIBE30G datasheet preview

Datasheet Details

Part number IRFIBE30G
Datasheet IRFIBE30G-Vishay.pdf
File Size 750.75 KB
Manufacturer Vishay
Description Power MOSFET
IRFIBE30G page 2 IRFIBE30G page 3

IRFIBE30G Overview

Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFIBE30G Key Features

  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
  • Dynamic dV/dt rating
  • Low thermal resistance
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

IRFIBE30G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFIBE30G Power MOSFET International Rectifier
INCHANGE Logo IRFIBE30G N-Channel MOSFET INCHANGE
Vishay logo - Manufacturer

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