IRFL210 Datasheet | Vishay

FEATURES - Surface-mount - Available in tape and reel - Dynamic d V/dt rating - Repetitive avalanche rated - Fast switching - Ease of paralleling Available - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location SOT-223 Si HFL210TR-GE3 a IRFL210TRPb F-BE3 a, b IRFL210TRPb F a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Linear derating factor (PCB mount) e Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 81 m H, RG = 25 , IAS = 0.96 A (see fig. 12) c. ISD  3.3 A, d I/dt  70 A/μs, VDD  VDS, TJ  150 °C d. 1.6 mm from case e. When mounted on 1"...