Click to expand full text
www.vishay.com
IRFPC60
Vishay Siliconix
Power MOSFET
D TO-247AC
G
S
D G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
210 26 110 Single
0.40
ORDERING INFORMATION
Package Lead (Pb)-free
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.