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IRFPE30 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRFPE30, SiHFPE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 800 VGS = 10 V 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Single 3.

General Description

Third Generation Power MOSFETs from Vishay provide the designer with best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices.

The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Key Features

  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Isolated Central Mounting Hole.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

IRFPE30 Distributor