IRFPE30 Datasheet | Vishay

Power MOSFET IRFPE30, Si HFPE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) 800 VGS = 10 V Qgs (n C) Qgd (n C) Configuration Single TO-247AC S N-Channel MOSFET Features - Dynamic d V/dt Rated - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247AC IRFPE30Pb F Si HFPE30-E3 IRFPE30 Si...