IRFPE40 Datasheet | Vishay

.vishay. Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 800 VGS = 10 V 130 17 72 Single TO-247AC S N-Channel MOSFET Features - Dynamic d V/dt rating - Repetitive avalanche rated - Isolated central mounting hole - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFPE40Pb...