IRFPE50 Datasheet | Vishay

.vishay. Vishay Siliconix Power MOSFET D TO-247AC S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V Single Features - Dynamic d V/dt rated - Repetitive avalanche rated - Isolated central mounting hole Available - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFPE50Pb...