IRFSL11N50A
FEATURES
- Dynamic d V/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to Ro HS Directive 2002/95/EC DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
I2PAK (TO-262) IRFSL11N50APb F Si HFSL11N50A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s
TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum...
