IRFSL11N50A Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. pulse width limited by maximum junction temperature (see fig. Starting TJ = 25 °C, L = 6.4 mH, RG = 25 , IAS = 11 A (see fig.
IRFSL11N50A Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the