IRFSL9N60A Description
IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single I2PAK (TO-262) D 0.75 G S D G S N-Channel.
IRFSL9N60A Key Features
- Halogen-free According to IEC 61249-2-21
- Low Gate Charge Qg Results in Simple Drive
- Improved Gate, Avalanche and Dynamic
- Fully Characterized Capacitance and Avalanche Voltage
- pliant to RoHS Directive 2002/95/EC