Vishay IRFU110
Power MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Straight Lead
● Available in Tape and Reel
● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
● Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IPAK (TO-251) SiHFU110-GE3 IRFU110PbF SiHFU110-E3 IRFU110 SiHFU110ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a.