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IRFZ20 - Power MOSFET

General Description

The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements.

Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance.

Key Features

  • Extremely Low RDS(on).
  • Compact Plastic Package.
  • Fast Switching.
  • Low Drive Current.
  • Ease of Paralleling.
  • Excellent Temperature Stability.
  • Parts Per Million Quality.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number IRFZ20
Manufacturer Vishay
File Size 770.65 KB
Description Power MOSFET
Datasheet download datasheet IRFZ20 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRFZ20, SiHFZ20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 17 9.0 3.0 Single 0.10 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Extremely Low RDS(on) • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • Excellent Temperature Stability • Parts Per Million Quality • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance.