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IRFZ24 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • 175 °C operating temperature.
  • Fast switching.
  • Ease of paralleling.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number IRFZ24
Manufacturer Vishay
File Size 199.60 KB
Description Power MOSFET
Datasheet download datasheet IRFZ24 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFZ24 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 FEATURES • Dynamic dV/dt rating • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.