IRFZ48S
FEATURES
- Advanced process technology
- Surface-mount (IRFZ48S, Si HFZ48S)
- Low-profile through-hole (Si HFZ48L)
- 175 °C operating temperature
Available
- Fast switching
- Material categorization: for definitions of Available pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK (TO-263) is a surface-mount power package capable of acmodating die sizes up...
