IRLD014
FEATURES
60 0.20
- Dynamic d V/dt Rating
- For Automatic Insertion
- End Stackable
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- pliant to Ro HS Directive 2002/95/EC
Available
Ro HS-
PLIANT
HVMDIP
DESCRIPTION
G S D S N-Channel MOSFET G
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free Sn Pb HVMDIP IRLD014Pb F Si HLD014-E3 IRLD014 Si HLD014
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear...
