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IRLD024 - Power MOSFET

Datasheet Summary

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt rating.
  • For automatic insertion.
  • End stackable.
  • Logic-level gate drive.
  • RDS(on) dpecified at VGS = 4 V and 5 V.
  • 175 °C operating temperature.
  • Fast switching.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number IRLD024
Manufacturer Vishay
File Size 830.22 KB
Description Power MOSFET
Datasheet download datasheet IRLD024 Datasheet
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Full PDF Text Transcription

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www.vishay.com IRLD024 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18 4.5 12 Single 0.10 FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • Logic-level gate drive • RDS(on) dpecified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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