IRLD110 - Power MOSFET

Vishay

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt rating.
Repetitive avalanche rated.
For automatic insertion.
End stackable.
Logic-level gate drive.
RDS(on) specified at VGS = 4 V and 5 V.
175 °C operating temperature.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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IRLD110 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRLD110
Manufacturer	Vishay
File Size	786.38 KB
Description	Power MOSFET
Datasheet	IRLD110 Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com IRLD110 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.