Click to expand full text
www.vishay.com
IRLD110
Vishay Siliconix
Power MOSFET
D HVMDIP
S G
D
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
6.1 2.6 3.3 Single
0.54
FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.