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www.vishay.com
IRLD120
Vishay Siliconix
Power MOSFET
D HVMDIP
S G
D
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 5.0 V
0.27
Qg (Max.) (nC)
12
Qgs (nC)
3.0
Qgd (nC)
7.1
Configuration
Single
FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.