IRLIZ14G Datasheet | Vishay

.vishay. Vishay Siliconix Power MOSFET D TO-220 FULLPAK S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS = 5.0 V Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration Single Features - Isolated package - High voltage isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to lead creepage distance = 4.8 mm - Logic-level gate drive - RDS(on) specified at VGS = 4 V and 5 V - Fast switching - Ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK IRLIZ14GPb...