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IRLR110 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Surface Mount (IRLR110, SiHLR110).
  • Straight Lead (IRLU110, SiHLU110).
  • Available in Tape and Reel.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Datasheet Details

Part number IRLR110
Manufacturer Vishay
File Size 1.83 MB
Description Power MOSFET
Datasheet download datasheet IRLR110 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 6.1 2.0 3.3 Single 0.54 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.