IRLZ24 Key Features
- Dynamic dV/dt Rating
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC
- Part: IRLZ24
- Description: Power MOSFET
- Manufacturer: Vishay
- Size: 1.30 MB
Other IRLZ24 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRLZ24 | HEXFET POWER MOSFET |
Samsung Electronics |
IRLZ24 | N-Channel MOSFET |
|
Samsung Electronics |
IRLZ24A | Advanced Power MOSFET |
Vishay |
IRLZ24L | Power MOSFET |
|
International Rectifier |
IRLZ24N | HEXFET POWER MOSFET |