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IRLZ24

Manufacturer: Vishay
IRLZ24 datasheet preview

Datasheet Details

Part number IRLZ24
Datasheet IRLZ24-Vishay.pdf
File Size 1.30 MB
Manufacturer Vishay
Description Power MOSFET
IRLZ24 page 2 IRLZ24 page 3

IRLZ24 Overview

Third generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

IRLZ24 Key Features

  • Dynamic dV/dt Rating
  • Logic-Level Gate Drive
  • RDS(on) Specified at VGS = 4 V and 5 V
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • pliant to RoHS Directive 2002/95/EC

IRLZ24 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRLZ24 HEXFET POWER MOSFET International Rectifier
Samsung Electronics Logo IRLZ24 N-Channel MOSFET Samsung Electronics
Samsung Electronics Logo IRLZ24A Advanced Power MOSFET Samsung Electronics
Vishay Siliconix Logo IRLZ24L Power MOSFET Vishay Siliconix
International Rectifier Logo IRLZ24N HEXFET POWER MOSFET International Rectifier
Vishay logo - Manufacturer

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