Datasheet Details
| Part number | IRLZ24 |
|---|---|
| Manufacturer | Vishay |
| File Size | 1.30 MB |
| Description | Power MOSFET |
| Datasheet | IRLZ24-Vishay.pdf |
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Overview: Power MOSFET IRLZ24, SiHLZ24 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18 4.5 12 Single 0.
| Part number | IRLZ24 |
|---|---|
| Manufacturer | Vishay |
| File Size | 1.30 MB |
| Description | Power MOSFET |
| Datasheet | IRLZ24-Vishay.pdf |
|
|
|
Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRLZ24 | HEXFET POWER MOSFET | International Rectifier |
 |
IRLZ24 | N-Channel MOSFET | Samsung Electronics |
|
IRLZ24A | Advanced Power MOSFET | Samsung Electronics |
 |
IRLZ24L | Power MOSFET | Vishay Siliconix |
|
IRLZ24N | HEXFET POWER MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRLZ14S | Power MOSFET |
| IRLZ34 | Power MOSFET |
| IRLZ34L | Power MOSFET |
| IRLZ34S | Power MOSFET |
| IRLZ44 | Power MOSFET |
| IRL510S | Power MOSFET |
| IRL520 | Power MOSFET |
| IRL520L | Power MOSFET |
| IRL520S | Power MOSFET |
| IRL530 | Power MOSFET |