Datasheet Summary
Power MOSFET
IRLZ34, SiHLZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
60 VGS = 5.0 V
Qgs (nC)
Qgd (nC)
Configuration
Single
TO-220AB
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
Features
- Dynamic dV/dt Rating
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC
Available
RoHS-
PLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low...
