K814P Overview
The K814P, K824P, K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
K814P Key Features
- Endstackable to 2.54 mm (0.1") spacing
- DC isolation test voltage VISO = 5000 VRMS
- Low coupling capacitance of typical 0.3 pF
- Current transfer ratio (CTR) of typical 100 %
- Low temperature coefficient of CTR
- Wide ambient temperature range
- Material categorization: for definitions of pliance