Vishay K814P
The K814P, K824P, K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT End of Life June-2024 K814P, K824P, K844P Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER CONDITION SYMBOL VALUE UNIT INPUT Forward current Forward surge current tp ≤ 10 μs IF 60 mA IFSM 1.5 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current Collector peak current IC 50 mA tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Pdiss 150 mW...
Vishay
